Blank Cover Image

EFFECTS OF RAPID THERMAL ANNEALS ON BORON IMPLANTED GaAs

著者名:
掲載資料名:
Advances in materials, processing, and devices in III-V compound semiconductors
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
144
発行年:
1989
開始ページ:
471
終了ページ:
476
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
言語:
英語
請求記号:
M23500/144
資料種別:
国際会議録

類似資料:

1 国際会議録 EFFECTS OF HELIUM ION IMPLANTATION ON THE OPTICAL AND CRYSTAL PROPERTIES OF GaAs

Bowman Jr., R. C., Adams, P. M., Knudsen, J. F., Moss, S. C., Dafesh, P. A., Smith, D. D., Herman, M. H., Ward, I. d.

Materials Research Society
7 国際会議録 RAPID THERMAL ANNEALING OF Si-IMPLANTED GaAs FOR POWER FETs

Kanber, H., Cipolli, R. J., Whelan, J. M.

Materials Research Society
2 国際会議録 STUDY OF BORON IMPLANTATION IN CdTe

Jamieson, D. N., Bowman Jr., R. C., Adams, P. M., Knudsen, J. F., Downing R. G.

Materials Research Society
8 国際会議録 DIFFUSION AND ACTIVATION DURING RAPID THERMAL ANNEALING OF IMPLANTED BORON IN SILICON

Cowern, N.E.B., Yallup, K.J., Godfrey, D.J., Hasko, D.G., McMahon, R.A., Ahmed, H., Stobbs, W.M., McPhail, D.S.

Materials Research Society
3 国際会議録 X-RAY AND RAMAN TOPOGRAPHIC STUDIES OF GaAs IMPLANTED WITH 28Si+ AND PULSED LASER ANNEALED

Bowman, Jr., R.C., Knudsen, J.F., Adams, P.M., Yao, H.D., Compaan, A.D.

Materials Research Society
9 国際会議録 TRANSIENT ANNEALING OF BORON IMPLANTED DEVICES

Wilson, S. R., Paulson, W. M., Varker, C. J., Lowe, A., Gregory, R. B., Reuss, R. H., Wu, S. Y., Whitfield, J. D.

North-Holland
4 国際会議録 RAPID THERMAL ANNEALING OF Si-IMPLANTED GaAs

Rosenblatt, D. H., Hitchens, W. R., Shatas, S., Gat, A., Betts, D. A.

North-Holland
10 国際会議録 RAPID THERMAL ANNEALING OF GaAs/A1GaAs COUPLED DOUBLE QUANTUM WELLS

Koteles, Emil S., Elman, B., Armiento, C. A., Melman, P., Chi, J. Y., Holmstrom,. R. J., Powers, J., Owens, D., …

Materials Research Society
5 国際会議録 CHARACTERIZATION OF ION IMPLANTED ZnSe/GaAs UPON RAPID THERMAL ANNEALING

Lowen, P. D., Jones, K. S., Ochoa, R., Simmons, J., Wang, Y. H., Park, R. M., Wilson, R.

Materials Research Society
11 国際会議録 RAPID THERMAL ANNEALING AND ION IMPLANTATION OF HETEROEPITAXIAL ZnSe/GaAs

Skromme, B. K., Stoffel, N. G., Gozdz, A. S, Tamargo, M. C., Shibli, S. M.

Materials Research Society
6 国際会議録 POINT DEFECT EVOLUTION DURING RAPID THERMAL ANNEALING OF Si+-IMPLANTED GaAs

Levinson,. M, Armeinto, C. A., Shah, S. S. P.

Materials Research Society
12 国際会議録 EFFECTS OF BORON IMPLANTATION OF SILICON DIOXIDE PASSIVATED HgCdTe

Bowman Jr., R., C., Marks, J., Downing, R. G., Knudsen, J. F., To, G. A.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12