Blank Cover Image

STUDY OF LAYER DISORDERING IN MeV Si IMPLANTED GaAs/A1GaAs SUPERLATTICES

著者名:
掲載資料名:
Advances in materials, processing, and devices in III-V compound semiconductors
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
144
発行年:
1989
開始ページ:
463
終了ページ:
470
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990173 [1558990178]
言語:
英語
請求記号:
M23500/144
資料種別:
国際会議録

類似資料:

1 国際会議録 CORRELATION BETWEEN DEFECT CHARACTERISTICS AND LAYER INTERMIXING IN Si IMPLANTED GaAs/A1GaAs SUPERLATTICES

Chen, Samuel, Lee, -Tong S., Braunstein, G., Rajeswaran G., Fillinger, P.

Materials Research Society
7 国際会議録 IMPLANTATION-INDUCED VOIDS FOR THERMALLY STABLE ELECTRICAL ISOLATION IN GaAs

Ko, K. Y., Samuel, Chen, Lee, S.-Tong, Braunstein, G.

Materials Research Society
2 国際会議録 INFLUENCE OF THE TEMPERATURE OF IMPLANTATION ON THE MORPHOLOGY OF DEFECTS IN MeV IMPLANTED GaAs

Braunstein,. G., Chen, Samuel, Lee, -Tong S, Rajeswaran, G.

Materials Research Society
8 国際会議録 ON THE DISTRIBUTION MECHANISM OF VOIDS IN Si-IMPLANTED GaAs

Chen, Samuel, Lee, S.-Tong, Braunstein, G., Ko, K.Y., Tan, T.Y.

Materials Research Society
3 国際会議録 TEM STUDY OF THE ANNEALING BEHAVIOR OF SECONDARY DEFECTS IN 1 MeV Si IMPLANTED GaAs

Chen, Samuel, Braunstein, G., Lee, S.-Tong

Materials Research Society
9 国際会議録 EFFECTS OF IMPLANT TEMPERATURE ON DISORDERING OF A1As-GaAs SUPERLATTICES

Dobisz, E.A., Tell, B., Craighead, H.G., Schwarz, S.A., Tamargo, M.C., Harbison, J.P.

Materials Research Society
4 国際会議録 DISORDERING OF Si-IMPLANTED GaAs-A1GaAs SUPERLATTICES BY RAPID THERMAL ANNEALING

Lee, -Tong S., Braunstein G., Fellinger, P., Rajeswaran, G.

Materials Research Society
10 国際会議録 MeV BORON IMPLANTATION AND MASKING

Lavine, James P., Filo, A. J., Losee, D. L., Guidash, P. A., Lee, S.-T., Braunstein, G. H., Kosman, S. L., Kyan, H.

MRS - Materials Research Society
5 国際会議録 DEFECT STRUCTURE OF MeV Si IMPLANTATION IN GaAs

Lee, S.-Tong, Braunstein, G., Chen, Samuel

Materials Research Society
11 国際会議録 Layer disordering and carrier concentration in heavily carbon-doped AlGaAs/GaAs superlattices

You, H. M., Tan, T. Y., Gosele, U. M., Hofler, G. E., Hsieh, K. C., Holonyak, N., Jr., Lee, S. -T.

MRS - Materials Research Society
6 国際会議録 RELALTIONSHIP BETWEEN ELECTRICAL ACTIVATION AND RESIDUAL DEFECTS IN MeV Si IMPLANTED GaAs

Braunstein, G., Zheng, L. -R., Chen, Samuel, Lee, -Tong S., Peterson, D. L., Ko, K. -Y., Rajeswaran, G.

Materials Research Society
12 国際会議録 EFFECT OF Si IMPLANTATION AND RAPID THERMAL ANNEALING ON GaAs/A1GaAs SUPERLATTICE DISORDERING

Flood, J.D., Bahir, G., Merz, J.L., Kobayashi, J., Fukunaga, T., Ishida, K., Nakashima, H.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12