THERMAL STABILITY OF EL2 IN GaAs

THERMAL STABILITY OF EL2 IN GaAs

著者名:

掲載資料名:

Advances in materials, processing, and devices in III-V compound semiconductors

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

144

発行年:

1989

開始ページ:

3

終了ページ:

8

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990173 [1558990178]

言語:

英語

請求記号:

M23500/144

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015629
シリーズID:	PA00000011
会議名:	Advances in Materials, Processing, and Devices in III-V Compound Semiconductors : Symposium
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.28-1998.12.02

類似資料:

1 国際会議録 The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs Bardeleben,H.J.von, Bourgoin,J.C., Stievenard,D. Trans Tech Publications	7 国際会議録 Detection and identification of the EL2 metastable state in GaAs Bourgoin,J.C. Trans Tech Publications
2 国際会議録 BISTABLE DEFECTS INDUCED IN GaAs BY H2 PLASMA PROCESS Boddaert, X, Vuillaume, D., Stievenard, D., Bourgoin, J. C., Boher, P. Materials Research Society	8 国際会議録 ACCURATE DETERMINATION OF CAPTURE TIME CONSTANT OF INTERFACE STATES IN MIS STRUCTURES. VUILLAUME,D., BARRIER,J., STIEVENARD,D., BOURGOIN,J.C. Trans Tech Publications
3 国際会議録 POINT DEFECTS, DISLOCATIONS IN GaAs AND MATERIAL HOMOGENEITY Bourgoin, J. C., von Bardeleben, H. J., Lim, H., Stievenard, D. Materials Research Society	9 国際会議録 Detection Of Defects Responsible for Lifetime in p-Type Si Zazoui,M., Bourgoin,J.C., Stievenard,D., Deresmes,D. Trans Tech Publications
4 国際会議録 CHARACTERIZATION OF ELECTRON TRAPS IN GaAs-GaAlAs SUPERLATTICES. SILLION,F., MAUGER,A., BOURGOIN,J.C., DEVFAUD,B., REGRENY,A., STIEVENARD,D. Trans Tech Publications	10 国際会議録 Evidence for an Assisted Defect Mechanism Leading to a Reduced Apparent Band Offset Stievenard,D., Letartre,X., Lannoo,M., Abou,S., Guillot,G. Trans Tech Publications
5 国際会議録 ON THE BEHAVIOUR OF HOLE CAPTURE WITH MULTIPHONON EMISSION AT DEEP LEVEL DEFECTS H3 and H4 IN p-GaAs. MURAWALA,P.A., STIEVENARD,D., LANNOO,M., BOURGOIN,J.C. Trans Tech Publications	11 国際会議録 The Electron Irradiation Induced Defect E1,E2 in GaAs:Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model Bardeleben,H.J.von, Delerue,C., Stievenard,D. Trans Tech Publications
6 国際会議録 *INTRINSIC DEFECTS IN GaAs - THE CASE OF EL2 von Bardeleben, H. J., Stievenard, D. Materials Research Society	12 国際会議録 Energy levels associated with the metastable state of EL2 Stievenard,D., Delerue,C., Bremond,G., Guillot,G., Azoulay,R., Bardeleben,H.J.von, Bourgoin,J.C., Portal,J.C., Ranz,E. Trans Tech Publications

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