SURFACE CONDITION IN THE PLASMA-CVD OF a-Si:H,F FROM SiF4 AND H2

SURFACE CONDITION IN THE PLASMA-CVD OF a-Si:H,F FROM SiF4 AND H2

著者名:

Maruyama, A.

掲載資料名:

Chemical perspectives of microelectronic materials : symposium held November 30-December 2, 1988, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

131

発行年:

1989

開始ページ:

203

終了ページ:

208

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990043 [1558990046]

言語:

英語

請求記号:

M23500/131

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015616
シリーズID:	PA00000011
会議名:	Symposium on chemical perspectives of microelectronic materials
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.30-1988.12.02

類似資料:

1 国際会議録 SURFACE STATES ON a-Si:H,F GROWN FROM SiF4 AND H2 Maruyama,. A, Liu, J. Z., Chu, V., Shen, D. S., Wagner, S. Materials Research Society	7 国際会議録 Deposition of Poly-Si by Remote Plasma CVD with Si2H6-SiF4 Rhee, S.-W., Lee, I.-J., Kim, D.-H. American Institute of Chemical Engineers
2 国際会議録 OPTO-ELECTRONIC PROPERTIES OF μc-Si:H GROWN FROM SiF4 AND H2 BY PECVD Okada, Y., Campbell, I.H., Fauchet, P.M., Wagner, S. Materials Research Society	8 国際会議録 A NEW MATERIAL: a-Si,Ge:H,F IN a-Si,Ge:H,F/a-Si:H,F MULTILAYER STRUCTURES Conde, J.P., Chu, V., Shen, D.S., Angell, M., Wagner, S. Materials Research Society
3 国際会議録 a-Si AND μc-Si GROWN FROM SiF4 WITH HIGH H2 DULUTION IN A DC GLOW DISCHARGE Okada, Y., Chen, J., Campbell, I. H., Fauchet, P. M., Wagner, S. Materials Research Society	9 国際会議録 ETCHING SELECTIVITY OF SiF4 AND H2 PLASMAS FOR c-Si, A-Si:H AND Si02 Okada, Y., Wagner, S Materials Research Society
4 国際会議録 LIGHT-SOAKING OF a-Si:H,F FILMS DEPOSITED FROM SiF4 AND H2 Parl. H. R., Liu, J. Z., Maruyama, A., Wagner, S. Materials Research Society	10 国際会議録 a-(Si,Ge):H,F ALLOYS PREPARED FROM SiH4 AND GeF4 Slobodin, D., Aljishi, S., Okada, Y., Shen, D.-S., Chu, V., Wagner, S. Materials Research Society
5 国際会議録 THE STRUCTURE OF a-Si:H, F/a-Si,Ge:H, F INTERFACES Conde, J.P., Shen, D.-S., Campbell, I.H., Fauchet, P.M., Wagner, S. Materials Research Society	11 国際会議録 Low Temperature Growth of Nanocrystalline Silicon from SiF4 + SiH4 Chen, Yu, Taguchi, M., Wagner, S. MRS - Materials Research Society
6 国際会議録 MICROCRYSTALLINITY IN a-Si,Ge:H,F ALLOYS Shen, D.S., Kokodzey, J., Slobodin, D., Conde, J.P., Lane, C., Campbell, I.H., Fauchet, P.M., Wagner, S. Materials Research Society	12 国際会議録 ELECTRONIC TRANSPORT PROPERTIES OF a-Si:H,F/a-Si,Ge:H,F SUPERLATTICES Conde, J. P., Aljshi, S., Shen, D. S., Chu, V., Smith, Z. E., Wagner, S. Materials Research Society

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