Blank Cover Image

TEMPERATURE DEPENDENCE OF ETCH RATE AND RESIDUAL DAMAGE IN REACTIVELY ION ETCHED GaAs AND A1GaAs

著者名:
Pearton, S.J.
Jones, K.S.
Chakabarti, U.K.
Emerson, B.
Lane, E.
Vasile, M.J.
Fullowan, T.R.
Hobson, W.S.
Short, K.T.
Haegel, N.M.
さらに 5 件
掲載資料名:
Laser and particle-beam chemical processes on surfaces : symposium held November 29-December 2, 1988, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
129
発行年:
1989
開始ページ:
489
終了ページ:
494
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990029 [155899002X]
言語:
英語
請求記号:
M23500/129
資料種別:
国際会議録

類似資料:

1 国際会議録 ELEVATED TEMPERATURE REACTIVE ION ETCHING OF GaAs AND AlGaAs IN C2H6/H2

Pearton, S.J., Hobson, W.S., Jones, K.S.

Materials Research Society
7 国際会議録 Damage Investigation of GaAs and InGaP Dry Etched with an Electron Cyclotron Resonance Source

Cole, M.W., Han, W.Y., Pfeffer, R.L., Eckart, D.W., Pang, S.W., Ko, K.K., Ren, F., Hobson, W.S., Lothian, J.R., Lopata, …

Electrochemical Society
2 国際会議録 GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD

Hobson, W.S., Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M., Jacobson, D.C., Abernathy, C.R., Caruso, R.

Materials Research Society
8 国際会議録 USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs

Ren, F., Emerson, A. B., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Lothian, J.

Materials Research Society
3 国際会議録 ION IMPLANT ACTIVATION AND REDISTRIBUTION IN AlXGa1-XAs

Pearton, S.J., Hobson, W.S., Von Neida, A.E., Haegel, N.M., Jones, K.S., Morris, N., Sealy, B.J.

Materials Research Society
9 国際会議録 Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source

Hobson,W.S., McAfee,S.R., Jones,K.S., Paroskevopoulos,N.C., Abernathy,C.R., Sputz,S.K., Harris,T.D., Schnoes,M.Lamont, …

Trans Tech Publications
4 国際会議録 ACTIVATION AND INTERDIFFUSION CHARACTERISTICS IN IMPLANTED GaAs-A1GaAs HETEROSTRUCTURES ON Si

Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M.

Materials Research Society
10 国際会議録 ION BEAM INDUCED INTERMIXING OF WSi0.45 oN GaAS

Pearton, S.J., Short, K.T., Jones, K.S., Baca, A.G., Wu, C.S.

Materials Research Society
5 国際会議録 Wet and Dry Etch Selectivity For the GaAs/AlGaAs and GaAs/InGaP Systems

Hays, D., Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S.

Electrochemical Society
11 国際会議録 DRY SURFACE CLEANING OF PLASMA-ETCHED HEMTs

Pearton, S.J., Ren, F., Katz, A., Chakrabarti, U.K., Lane, E., Hobson, W.S., Kopf, R.F., Abernathy, C.R., Wu, C.S., …

Materials Research Society
6 国際会議録 IODINE-BASED DRY ETCHING CHEMISTRIES FOR InP AND RELATED COMPOUNDS

Pearton, S.J., Chakrabarti, U.K., Katz, A., Abernathy, C.R., Hobson, W.S., Ren, F., Fullowan, T.R.

Materials Research Society
12 国際会議録 IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING

Ren, F., Pearton, S. J., Fullowan, T. R., Hobson, W. S., Chu, S. N. G., Emerson, A. B.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12