A COMPARISON OF THE GAS PHASE PROCESSES RESULTING FROM SiH4 AND Si2H6 PHOTODISSOCIATION WITH A PULSED ArF EXCIMER LASER

A COMPARISON OF THE GAS PHASE PROCESSES RESULTING FROM SiH4 AND Si2H6 PHOTODISSOCIATION WITH A PULSED ArF EXCIMER LASER

著者名:

掲載資料名:

Laser and particle-beam chemical processes on surfaces : symposium held November 29-December 2, 1988, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

129

発行年:

1989

開始ページ:

195

終了ページ:

200

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990029 [155899002X]

言語:

英語

請求記号:

M23500/129

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015614
シリーズID:	PA00000011
会議名:	Symposium on laser and particle-beam chemical processes on surfaces
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.29-1988.12.02

類似資料:

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2 国際会議録 COMPARISON OF THE PROCESSES INDUCED BY MERCURY LAMP AND ArF EXCIMER LASER PHOTOASSISTED CVD OF a-Si: H FILMS Fuchs, C., Fogarassy, E. Materials Research Society	8 国際会議録 PHOSPHORUS AND BORON DOPING OF SILICON THIN FILMS USING ArF EXCIMER LASER Slaoui, A., Pattyn, H., Fogarassy, E., De Unamuno, S., Stuck, R. Materials Research Society
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