SILICIDED SHALLOW JUNCTION FORMATION USING ION IMPLANTATION AND THERMAL ANNEALING

SILICIDED SHALLOW JUNCTION FORMATION USING ION IMPLANTATION AND THERMAL ANNEALING

著者名:

掲載資料名:

Processing and characterization of materials using ion beams : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

128

発行年:

1989

開始ページ:

641

終了ページ:

646

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558990012 [1558990011]

言語:

英語

請求記号:

M23500/128

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015613
シリーズID:	PA00000011
会議名:	Symposium on processing and characterization of materials using ion beams
回次:	1988
会議開催地:	Boston, MA, USA
会議開催年:	1988.11.28-1988.12.02

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