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*LOW PRESSURE MOCVD GROWTH AND CHARACTERIZATION OF GaAs AND InP ON SILICON SUBSTRATES

著者名:
Razeghi, M.
Defour, M.
Omnes, F.
Nagle, J.
Maurel, P.
Acher, O.
Huber, A.
Mijui, D.
さらに 3 件
掲載資料名:
Advanced surface processes for optoelectronics : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
126
発行年:
1988
開始ページ:
143
終了ページ:
152
総ページ数:
10
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837968 [0931837960]
言語:
英語
請求記号:
M23500/126
資料種別:
国際会議録

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