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EPITAXIAL GROWTH OF InP ON Si BY MOCVD

著者名:
Konushi, F.
Seki, A.
Kudo, J.
Sato, H.
Kakimoto, S.
Fukushima, T.
Kubota, Y.
Koba, M.
さらに 3 件
掲載資料名:
Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
116
発行年:
1988
開始ページ:
307
終了ページ:
312
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837869 [0931837863]
言語:
英語
請求記号:
M23500/116
資料種別:
国際会議録

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