DEFECTS IN LARGE-MISFIT HETEROEPITAXY

DEFECTS IN LARGE-MISFIT HETEROEPITAXY

著者名:

掲載資料名:

Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

116

発行年:

1988

開始ページ:

267

終了ページ:

272

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837869 [0931837863]

言語:

英語

請求記号:

M23500/116

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015601
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	1988
会議開催地:	Reno, NV, USA
会議開催年:	1988.04.05-1988.04.08

類似資料:

1 国際会議録 Strains and Misfit Dislocations at Interfaces Humphreys J. C., Eaglesham J. D., Maher M. D., Fraser L. H., Salisbury I. Plenum Press	7 国際会議録 Scaling the gate dielectric Eaglesham,D.J. SPIE - The International Society for Optical Engineering
2 国際会議録 ISLAND FORMATION IN Ge ON Si HETEROEPITAXY Eaglesham, D. J., Cossmann, H.-J., Cerullo, M. Materials Research Society	8 国際会議録 Scaling the gate dielectric Eaglesham,D.J. SPIE - The International Society for Optical Engineering
3 国際会議録 Heteroepitaxy of CoSi2 on Patterned Si(100) Substrates Karpenko, O. P., Eaglesham, D. J., Yalisove, S. M. MRS - Materials Research Society	9 国際会議録 Scaling the gate dielectric Eaglesham,D.J. SPIE - The International Society for Optical Engineering
4 国際会議録 Defect Structure and Processes in a 1-D Periodic Interface Serra,A., Bacon,D.J., Pond,R.C. Trans Tech Publications	10 国際会議録 Scaling the gate dielectric Eaglesham,D.J. SPIE - The International Society for Optical Engineering
5 国際会議録 THE NUCLEATION AND PROPAGATION OF MISFIT DISLOCATIONS NEAR THE CRITICAL THICKNESS IN Ge-Si STRAINED EPILAYERS Kvam, E. P., Eaglesham, D. J., Maher, D. M., Humphreys, C. J., Bean, J. C., Green, G. S., Tanner, B. K. Materials Research Society	11 国際会議録 Ge HETEROEPITAXY ON (100) Si SUBSTRATES BY ION ASSISTED DEPOSITION Holesinger, T.G., Heim, D.J., Lakin, K.M., Shanks, H.R. Materials Research Society
6 国際会議録 DEFECT ANISOTROPY IN MOVPE CdTe/GaAs Cheng, T.T., Aindow, M., Jones, I.P., Hails, J.E., Williams, D.J., Astles, M.G. Materials Research Society	12 国際会議録 Influence Of Vacuum Annealing on Native Si Point Defects Gossmann, H.-J., Mogi, T.K., Rafferty, C.S., Stolk, P.A., Eaglesham, D.J., Luftman, H.S., Unterwald, F.C., Boone, T., … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12