GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD

GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD

著者名:

Hobson, W.S.

掲載資料名:

Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

116

発行年:

1988

開始ページ:

147

終了ページ:

154

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837869 [0931837863]

言語:

英語

請求記号:

M23500/116

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015601
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	1988
会議開催地:	Reno, NV, USA
会議開催年:	1988.04.05-1988.04.08

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