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DEFECT REDUCTION IN MOCVD GROWN Si/GaAs

著者名:
掲載資料名:
Heteroepitaxy on silicon : fundamentals, structure, and devices : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
116
発行年:
1988
開始ページ:
141
終了ページ:
146
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837869 [0931837863]
言語:
英語
請求記号:
M23500/116
資料種別:
国際会議録

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