BURIED SILICON-NITRIDE BY HIGH TEMPERATURE NITROGEN IMPLANTATION

BURIED SILICON-NITRIDE BY HIGH TEMPERATURE NITROGEN IMPLANTATION

著者名:

掲載資料名:

Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

107

発行年:

1988

開始ページ:

479

終了ページ:

482

総ページ数:

4

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837753 [0931837758]

言語:

英語

請求記号:

M23500/107

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015593
シリーズID:	PA00000011
会議名:	Symposium on silicon-on-insulator and buried metals in semiconductors
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

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6 国際会議録 A STUDY OF THE EFFECTS OF IMPLANTATION DOSE AND ANNEALING TEMPERATURE ON THE FORMATION OF BURIED NITRIDE SOI STRUCTURES Kerger, M.B., Kwor, R., Zeller, M., Hemment, P.L.F., Reeson, K.J. Materials Research Society	12 国際会議録 OXYGEN-NITROGEN INTERACTIONS IN ION-IMPLANTED SILICON Stein, H. J. Materials Research Society

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