SYNTHESIS OF BURIED LAYERS OF β SiC IN SINGLE CRYSTAL SILICON

SYNTHESIS OF BURIED LAYERS OF β SiC IN SINGLE CRYSTAL SILICON

著者名:

掲載資料名:

Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

107

発行年:

1988

開始ページ:

473

終了ページ:

478

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837753 [0931837758]

言語:

英語

請求記号:

M23500/107

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015593
シリーズID:	PA00000011
会議名:	Symposium on silicon-on-insulator and buried metals in semiconductors
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

類似資料:

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2 国際会議録 TOTAL DIELECTRIC ISOLATION (TDI) OF DEVICE ISLANDS USING SIMOX/SOI TECHNOLOGY Hemment, P. L. F., Robinson, A. K., Reeson, K. J., Davis, J. R., Kilner, J. R., Chater, R. J., Stoemenos, J. Materials Research Society	8 国際会議録 AN INVESTIGATION OF BURIED LAYER FORMATION BY 40keV OXYGEN IMPLANTATION INTO SILICON Li, Y., Kilner, A., Chater, R. J., Tate, T. J., Hemment, P. L. F., Nejim, A. Materials Research Society
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