FORMATION OF BURIED TiSi2 LAYERS IN SINGLE CRYSTAL SILICON BY ION IMPLANTATION

FORMATION OF BURIED TiSi2 LAYERS IN SINGLE CRYSTAL SILICON BY ION IMPLANTATION

著者名:

掲載資料名:

Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

107

発行年:

1988

開始ページ:

281

終了ページ:

286

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837753 [0931837758]

言語:

英語

請求記号:

M23500/107

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015593
シリーズID:	PA00000011
会議名:	Symposium on silicon-on-insulator and buried metals in semiconductors
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

類似資料:

1 国際会議録 DOPANT DIFFUSION IN TiSi2 d'Heurle, F.M., Michel, A.E., LeGoues, F.K., Scilla, G., Wetzel, J.T., Gas, P. Materials Research Society	7 国際会議録 Theoretical Considerations about Phase Growth and Phase Formation d'Heurle, F. M. MRS - Materials Research Society
2 国際会議録 ION BEAM IRRADIATION OF METAL FILMS ON SiD2 Clark, G. J., Baglin, J. E. E., d'Heurle, F. M., White, C. W., Farlow, G., Narayan, J. North-Holland	8 国際会議録 Nucleation phenomena in transitions from two to three phases, diffusion couples, phase stability, the thin film formation of some silicides d'Heurle, F. M. North-Holland
3 国際会議録 FORMATION OF NICKEL SILICIDES ON ION-AMORPHIZED SILICON Mohadjeri, B., Linnros, J., Svensson, B. G., Ostling M,, Johansson, S., d'Heurle, F. M. Materials Research Society	9 国際会議録 CRYSTALLIZATION OF AMORPHOUS TUNGSTEN DISILICIDE: STACKING FAULTS AND RESISTIVITY LeGoues, F.K., d’Heurle, F.M., Joshi, R., Suni, Ilka Materials Research Society
4 国際会議録 EFFECT OF AN INTERFACIAL Ti LAYER ON THE FORMATION OF CoSi2 ON Si Barmak, K., Clevenger, L. A., Agnello, P. D., Ganin, E., Copel, M., Dehaven, P., Falta, J., d'Heurle, F. M., Cabral Jr., … Materials Research Society	10 国際会議録 MESOTAXY: GROWTH OF BURIED SINGLE-CRYSTAL CoSi2 LAYERS BY IMPLANTATION White, Alice E., Short, K.T., Dynes, R.C., Garno, J.P., Gibson, J.M. Materials Research Society
5 国際会議録 Reduction of the C54-TiSi2 Phase Formation Temperature Using Metallic Impurities Mann, R. W., Clevenger, L. A., Miles, G. L., Harper, J. M. E., Cabral, C., Jr, d'Heurle, F. M., Knotts, T. A., Rakowski, … MRS - Materials Research Society	11 国際会議録 FORMATION OF WELL-SEPARATED BURIED AND SURFACE NICKEL-SILICIDE LAYERS IN A SINGLE ION IMPLANTATION STEP Wu, M.F., De Wachter, J., Hendrickx, P., Pattyn, H., Van Bavel, A.M., Langouche, G., Vanhellemont, J., Bender, H., … Materials Research Society
6 国際会議録 ADHESION OF REACTIVE ION IMPLANTED COPPER FILMS ON A1203 AND Si02 Madakson, P. B., Baglin, J. E. E. Materials Research Society	12 国際会議録 Radioactive Ni Tracer Study of the Nickel Silicide Growth Mechanism* Baglin, J. E. E., Atwater, H. A., Gupta, D., D’Heurle, F. M. North-Holland

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