IN-SITU RAPID THERMAL ANNEALING OF HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY

IN-SITU RAPID THERMAL ANNEALING OF HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY

著者名:

Cerullo, M.

掲載資料名:

Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

107

発行年:

1988

開始ページ:

253

終了ページ:

258

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837753 [0931837758]

言語:

英語

請求記号:

M23500/107

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015593
シリーズID:	PA00000011
会議名:	Symposium on silicon-on-insulator and buried metals in semiconductors
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

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2 国際会議録 THE EFFECT OF RAPID THERMAL ANNEALING ON THE DISLOCATION STRUCTURE OF SILICON ON SAPPHIRE Aidow, M., Batstone, J.L., Pfeiffer, L., Phillips, J.M., Pond, R.C. Materials Research Society	8 国際会議録 *HOT ELECTRON TRANSISTORS USING Si/CoSi2 Levi, A. F. J., Tung, R. T., Batstone, J.L, Anzlowar, M. Materials Research Society
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4 国際会議録 ELECTRON TRANSPORT THROUGH EPTAXIAL METAL/SEMI-CONDUCTOR HETEROSTRUCTURES Levi, A.F.J., Tung, R.T., Batstone, J.L., Gibson, J.M., Anzlowar, M., Chantre, A. Materials Research Society	10 国際会議録 Novel Heterostructures Produced using In Situ Molecular-Beam Epitaxy Hong, M., Passlack, M., Noh, D.Y., Kwo, J., Mannaerts, J.P. Electrochemical Society
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