IMPROVEMENTS IN ZONE MELT RECRYSTALLIZED SOI LAYERS BY THE USE OF SELECTIVE EPITAXIAL GROWTH IN THE SEED WINDOWS

IMPROVEMENTS IN ZONE MELT RECRYSTALLIZED SOI LAYERS BY THE USE OF SELECTIVE EPITAXIAL GROWTH IN THE SEED WINDOWS

著者名:

Williams, D. A.

掲載資料名:

Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

107

発行年:

1988

開始ページ:

189

終了ページ:

194

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837753 [0931837758]

言語:

英語

請求記号:

M23500/107

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015593
シリーズID:	PA00000011
会議名:	Symposium on silicon-on-insulator and buried metals in semiconductors
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

類似資料:

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2 国際会議録 TEM AND SEM STUDIES OF MULTIPLE SILICON ON INSULATOR FILMS FOR THREE DIMENSIONAL CIRCUITS Williams, D. A., McMahon, R. A., Ahmed, H., Barfoot, K. M., Godfrey, D. J., Dunne, B., Mathewson, A. Materials Research Society	8 国際会議録 A COMPARISON OF MILLISECOND ANNEALING OF B IMPLANTS AND ISOTHERMAL ANNEALING FOR TIMES OF A FEW SECONDS McMahon, R. A., Hasko, D. G., Ahmed, H., Stobbs, W. M., Godfrey, D. J. Materials Research Society
3 国際会議録 A STUDY OF MELTING AND RESOLIDIFICATION OF SILICON-ON-INSULATOR STRUCTURES FORMED BY LATERAL EPITAXY Williams, D.A., McMahon, R.A., Hasko, D.G., Ahmed, H., Hopper, G.F., Godfrey, D.J. Materials Research Society	9 国際会議録 Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts Ferro, G., Soueidan, M., Jacquier, C., Godignon, P., Stauden, T., Pezoldt, J., Lazar, M., Montserrat, J., Monteil, Y. Trans Tech Publications
4 国際会議録 Improvement of Seed Layer Smoothness for Epitaxial Growth on Porous Silicon R. Martini, Radhakrishnan H. Sivaramakrishnan, V. Depauw, K. Van Nieuwenhuysen, I. Gordon Materials Research Society	10 国際会議録 Formation of single-crystal silicon layers on insulator islands using selective epitaxial growth and laser crystallization Cho, H.S., Xianyu, W., Zhang, X., Yin, H., Kim, D. Y., Bae Park, K, Yeon Kwon, J., Noguchi, T. Electrochemical Society
5 国際会議録 LARGE DIAMETER SOI WAFERS BY ZONE-MELTING-RECRYSTALLIZATION Zavracky, P. M., Vu, D. P., Allen, L., Henderson, W., Guekel, H., Sniegowski, J. J., Ford, T. P, Fan, J. C. C. Materials Research Society	11 国際会議録 SOI INTERFACE STRUCTURES IN SELECTIVE EPITAXIAL GROWTH Weng, Zara S., Gronsky, R., Lou, J. C., Oldham, W. G. Materials Research Society
6 国際会議録 ANNEALING AND DIFFUSION OF BORON IN SELF-IMPLANTED SILICON BY FURNACE AND ELECTRON BEAM HEATING Godfrey, D. J., McMahon, R. A., Hasko, D. G., Ahmed, H., Dowsett, M. G. Materials Research Society	12 国際会議録 Sol-Gel Growth of High-Quality Pb(Zr,Ti)O3 Films on RuO2 Using Seed Layers Norga, G. J., Fe, L., Wouters, D. J., Bartic, A., Maes, H. E. MRS - Materials Research Society

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