THE EFFECT OF Ge SEGREGATION ON OXIDATION OF Si

THE EFFECT OF Ge SEGREGATION ON OXIDATION OF Si

著者名:

掲載資料名:

SiO[2] and its interfaces : symposium held November 30-December 5, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

105

発行年:

1988

開始ページ:

277

終了ページ:

282

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837739 [0931837731]

言語:

英語

請求記号:

M23500/105

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015591
シリーズID:	PA00000011
会議名:	Symposium on SiO2 and its interfaces
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.05

類似資料:

1 国際会議録 DEPTH OSCILLATIONS OF PLANAR CHANNELING YIELD IN InP AND GaP FOR LATTICE LOCATION APPLICATIONS Swanson, M. L., Parikh, N. R., Sandhu, G. S., Frey, E. C., Zhang, Z. H., Chu, W. K. Materials Research Society	7 国際会議録 DOING OF DIAMOND OF CO-IMPLANTATION WITH DOPANT ATOMS AND CARBON Sandhu, G.S., Kao, C.T., Swanson, M.L., Chu, W.K. Materials Research Society
2 国際会議録 RBS/CHANNELING AND TEN ANALYSIS OF THIN SANDWICHED EPI-LAYERS OF GERMANIUM ON SILICON Swanson, M.L., Parikh, N.P., Frey, E.C., Sandhu, G.S., Chu, W.K., Baribeau, J.-M., Song, Kechang, McCaffrey, J., … Materials Research Society	8 国際会議録 MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs ON SILICON WITH BURIED IMPLANTED OXIDES Das, K., Humphreys, T. P., Posthill, J. B., Parikh, N., tarn, J., El-Masry, N., Bedair, S. M., Chu, W. K., Wortman, J. … Materials Research Society
3 国際会議録 ION BEAM ANALYSIS OF O, N, AND B COMPOSITIONS IN MATERIALS USING NON-RUTHERFORD SCATTERING OF PROTONS Parikh, N.R., Zhang, Z.H., Swanson, M.L., Yu, N., Chu, W.K. Materials Research Society	9 国際会議録 Phase Segregation in Manganese Perovskites Radaelli, P. G., Argyriou, D. N., Cox, D. E., Capogna, L., Casalta, H., Andersen, K., Cheong, S-W., Mitchell, J. F., … MRS - Materials Research Society
4 国際会議録 CHARACTERIZATION OF Si MBE LAYERS DOPED IN SITU BY As ION BEAMS Swanson, Max L., Parikh, N. R., Jackman, T. E., Houghton, D. C., Denhoff, M. W. Materials Research Society	10 国際会議録 DOPANT SITE LOCATION IN DUAL-IMPLANTED GaP USING {111} PLANAR CHANNELING Parikh, N.R., Kao, C.T., Lee, D.R., Muse, J., Swanson, M.L., Haynes, T.E., Venkatasubramanian, R., Timmons, M. Materials Research Society
5 国際会議録 RBS/CHANNELING AND TEM ANALYSIS OF HETEROEPITAXIAL Ge FILMS ON GaAs GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION Parikh, N. R., Hattangady, S. V., Posthill, J. B., King, M. L., Rudder, R. A., Vitkavage, D. J., Markunas, R. J., Chu, … Materials Research Society	11 国際会議録 KINETICS OF NiSi FORMATION BY SOLID STATE DIFFUSION IN Pt/NiCr/Si VIA GROWTH OF AN AMORPHOUS Cr-RICH BARRIER LAYER Patnaik, B.K., Lee, Ju Hyeon, Adams, D., Rozgonyi, G.A., Parikh, N.R., Swanson, M.L., Salih, A.S.M., Balducci, P. Materials Research Society
6 国際会議録 STUDY OF DIFFUSION BARRIERS FOR PZT DEPOSITED ON Si FOR NON-VOLATILE RANDOM-ACCESS MEMORY TECHNOLOGY Parikh, N.R., Stephen, J.T., Swanson, M.L, Myers, E.R. Materials Research Society	12 国際会議録 GaN Metal Oxide Semiconductor Field Effect Transistors Ren, F., Pearton, S.J., Abernathy, C.R., Baca, A.G., Cheng, P., Han, J., Shul, R.J., Chu, S.N.G., Hong, M., Lothian, … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12