RADIATION RESPONSE OF THIN OXIDES GROWN BY RAPID THERMAL OXIDATION AND RAPID THERMAL ANNEALING TECHNIQUES

RADIATION RESPONSE OF THIN OXIDES GROWN BY RAPID THERMAL OXIDATION AND RAPID THERMAL ANNEALING TECHNIQUES

著者名:

掲載資料名:

SiO[2] and its interfaces : symposium held November 30-December 5, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

105

発行年:

1988

開始ページ:

199

終了ページ:

204

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837739 [0931837731]

言語:

英語

請求記号:

M23500/105

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015591
シリーズID:	PA00000011
会議名:	Symposium on SiO2 and its interfaces
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.05

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