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*THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

著者名:
掲載資料名:
SiO[2] and its interfaces : symposium held November 30-December 5, 1987, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
105
発行年:
1988
開始ページ:
121
終了ページ:
126
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837739 [0931837731]
言語:
英語
請求記号:
M23500/105
資料種別:
国際会議録

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