INTERFACE DEFECTS IN GaAs AND GaAs-AlXGa1-XAs GROWN ON Ge

INTERFACE DEFECTS IN GaAs AND GaAs-AlXGa1-XAs GROWN ON Ge

著者名:

掲載資料名:

Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

104

発行年:

1988

開始ページ:

617

終了ページ:

622

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837722 [0931837723]

言語:

英語

請求記号:

M23500/104

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015590
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

類似資料:

1 国際会議録 THE STUDY OF INTERFACES IN GaAs Cho, N.-H., Rasmussen, D.R., McKernan, S., Carter, C.B., Wagner, D.K. Materials Research Society	7 国際会議録 Thick AlxGa1-xAs in GaAs/AlxGa1-xAs Quantum Wells:a Leaky Barrier, Kim,D.S., Ko,H.S., Kim,Y.M., Rhee,S.J., Hong,S.C., Yee,D.S., Woo,J.C., Choi,H.J., Ihm,J. SPIE-The International Society for Optical Engineering
2 国際会議録 CHARACTERIZATION OF DISLOCATIONS IN GaAs GROWN ON Si AND Ge Cho, N.-H., McKernan, s., Carter, C. B., De Cooman, B. C., Wagner, K. Materials Research Society	8 国際会議録 DEFECTS IN MBE-GROWN GaAs/ScXEr1-Xas/GaAs LAYERS Zhu, Jane G., Palmstrom, Chris. J., Carter, Barry C. Materials Research Society
3 国際会議録 CHARACTERIZATION OFAPBs IN GaAs AND GROWN ON Si AND Ge Carter, C. B., Cho, N. -H., McKernan, s. Materials Research Society	9 国際会議録 TEM STUDIES OF ORDERING IN MOCVD-GROWN (GaIn)P ON GaAs McKernan, S., De Cooman, B. C., Carter, C. B., Bour, D. P., Shealy, J. R. Materials Research Society
4 国際会議録 DEFECTS AND INTERFACES IN GaAs GROWN ON Si McKernan, S., Zhu, J.G., Carter, C.B., Caridi, E., Schaff, W. Materials Research Society	10 国際会議録 Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth Mao, Z., McKernan, X., Carter, C. B., Yang, W., McPherson, S. A. MRS - Materials Research Society
5 国際会議録 DEFECTS IN GaAs GROWN ON Ge SUBSTRATES Carter, C.B., DeCooman, B.C., Cho, N.H., Fletcher, R.M., Wagner, D.K., Ballantyne, J. Materials Research Society	11 国際会議録 DISLOCATIONS IN GaAs/Si INTERFACES Zhu, Jane G., McKernan, S., Carter, C. B., Schaff, W. J., Eastman, L. F. Materials Research Society
6 国際会議録 Effect of Annealing on GaAs:C, AlxGa1-xAs:C, and AlAs: Grown by Metalorganic Molecular Beam Epitaxy MacKenzie, J.D., Abernathy, C.R., Pearton, S.J., Chu, S.N.G., Hobson, W.S. Electrochemical Society	12 国際会議録 X-RAY DIFFRACTION DETERMINATION OF INTERFACE ROUGHNESS IN GaAs/AlxGa1-xAs MULTILAYERS Nayak, S., Redwing, J. M., Kuech, T. F., Phang, Y. -H., Savage, D. E., Lagally, M. G. MRS - Materials Research Society

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