SITE OCCUPATION OF IMPLANTED Te IN GaAs AS A FUNCTION OF IMPLANTATION DOSE
- 著者名:
Langouche, G. Schroyen, D. Bemelmans, H. Van Rossum, M. De Raedt, W. de Potter, M. - 掲載資料名:
- Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 104
- 発行年:
- 1988
- 開始ページ:
- 527
- 終了ページ:
- 532
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837722 [0931837723]
- 言語:
- 英語
- 請求記号:
- M23500/104
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Mossbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGal-XAS
Trans Tech Publications |
North Holland |
North-Holland |
Plenum Press |
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5
国際会議録
EVOLUTION OF DEFECT STRUCTURES AROUND Te IMP-LANTED IN GaAs DURING SOLID PHASE EPITAXIAL REGROWTH.
Trans Tech Publications |
Kluwer Academic Publishers |
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MRS - Materials Research Society |