POINT DEFECTS, DISLOCATIONS IN GaAs AND MATERIAL HOMOGENEITY

POINT DEFECTS, DISLOCATIONS IN GaAs AND MATERIAL HOMOGENEITY

著者名:

掲載資料名:

Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

104

発行年:

1988

開始ページ:

411

終了ページ:

414

総ページ数:

4

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837722 [0931837723]

言語:

英語

請求記号:

M23500/104

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015590
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

類似資料:

1 国際会議録 The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs Bardeleben,H.J.von, Bourgoin,J.C., Stievenard,D. Trans Tech Publications	7 国際会議録 BISTABLE DEFECTS INDUCED IN GaAs BY H2 PLASMA PROCESS Boddaert, X, Vuillaume, D., Stievenard, D., Bourgoin, J. C., Boher, P. Materials Research Society
2 国際会議録 *INTRINSIC DEFECTS IN GaAs - THE CASE OF EL2 von Bardeleben, H. J., Stievenard, D. Materials Research Society	8 国際会議録 THERMAL STABILITY OF EL2 IN GaAs Boddart, X., Letartre, X, Stievenard, D., Bourgoin ,J.. C. Materials Research Society
3 国際会議録 The Electron Irradiation Induced Defect E1,E2 in GaAs:Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model Bardeleben,H.J.von, Delerue,C., Stievenard,D. Trans Tech Publications	9 国際会議録 ON THE BEHAVIOUR OF HOLE CAPTURE WITH MULTIPHONON EMISSION AT DEEP LEVEL DEFECTS H3 and H4 IN p-GaAs. MURAWALA,P.A., STIEVENARD,D., LANNOO,M., BOURGOIN,J.C. Trans Tech Publications
4 国際会議録 Intrinsic defects in electron irradiated p-type GaAs Jia,Y.Q., Bardeleben,H.J.von, Stievenard,D., Delerue,C. Trans Tech Publications	10 国際会議録 Detection Of Defects Responsible for Lifetime in p-Type Si Zazoui,M., Bourgoin,J.C., Stievenard,D., Deresmes,D. Trans Tech Publications
5 国際会議録 A MODEL FOR THE ATOMIC CONFIGURATION OF THE EL2 DEFECT IN GaAs. STIFVENARD,D., BARDELEBEN,H.J.von, BOURGOIN,J.C., HUBER,A. Trans Tech Publications	11 国際会議録 Defect and structure analysis of n+and P+-type porous silicon by the Electron Paramagnetic Resonance Technique von Bardeleben,H.J., Stievenard*,D., Grosman,A., Ortega,C., Siejka,J. Kluwer Academic Publishers
6 国際会議録 THE METASTABILITY OF THE EL2 AND DX DEFECTS IN GaAs AND 3-5 ALLOYS von Bardeleben, H.J., Bourgoin, J.C. Materials Research Society	12 国際会議録 Energy levels associated with the metastable state of EL2 Stievenard,D., Delerue,C., Bremond,G., Guillot,G., Azoulay,R., Bardeleben,H.J.von, Bourgoin,J.C., Portal,J.C., Ranz,E. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12