ON THE ORIGIN OF EL2 INTRACENTER ABSORPTION BAND IN GaAs
- 著者名:
- Skowronski, M.
- 掲載資料名:
- Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 104
- 発行年:
- 1988
- 開始ページ:
- 405
- 終了ページ:
- 410
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837722 [0931837723]
- 言語:
- 英語
- 請求記号:
- M23500/104
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
SPIE - The International Society of Optical Engineering |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
MRS - Materials Research Society |
5
国際会議録
HIGH RESOLUTION OPTICAL STUDY OF THE ANTISITE DEFECT AsGa IN GaAs, CORRELATION WITH MIDGAP LEVEL EL2
Materials Research Society |
Trans Tech Publications |
Materials Research Society |
12
国際会議録
SCATTERING AND ABSORPTION OF INFRARED LIGHT ON EL2 CLUSTERS IN GaAS SEMI-INSULATING MATERIALS
Materials Research Society |