*EL2 AND THE ELECTRONIC STRUCTURE OF THE AsGa-Asi PAIR IN GaAs: THE ROLE OF JAHN-TELLER RELAXATION

*EL2 AND THE ELECTRONIC STRUCTURE OF THE AsGa-Asi PAIR IN GaAs: THE ROLE OF JAHN-TELLER RELAXATION

著者名:

掲載資料名:

Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

104

発行年:

1988

開始ページ:

375

終了ページ:

386

総ページ数:

12

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837722 [0931837723]

言語:

英語

請求記号:

M23500/104

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015590
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

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1 国際会議録 EL2 and the Electronic Structure of the AsGa-Asi Pair in GaAs:the Role of Jahn-Teller Relaxation and Coulomb Interaction Baraff,G.A., Schluter,M., Lannoo,M. Trans Tech Publications	7 国際会議録 HIGH RESOLUTION OPTICAL STUDY OF THE ANTISITE DEFECT AsGa IN GaAs, CORRELATION WITH MIDGAP LEVEL EL2 Skowronski, M., Lin, D. G., Lagowski, J., Pawlowicz, L..M., Ko, K. Y., Gatos, H. C. Materials Research Society
2 国際会議録 BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GaAs. BARAFF,G.A., SCHLUTER,M. Trans Tech Publications	8 国際会議録 *THE ROLE OF THEORY IN DEFECT PHYSICS Schluter, M. Materials Research Society
3 国際会議録 Superconductivity in Alkali Intercalated C60 Schluter M., Lannoo M., Needles M., Baraff A. G., Tomanek D. Kluwer Academic Publishers	9 国際会議録 ELASTIC MISFIT STRAIN RELAXATION IN HIGHLY STRAINED InAs DOTS ON GaAs AS STUDIED BY TEM, AFM AND VFF ATOMISTIC CALCULATIONS Androussi, Y., Francois, P., Lefebvre, A., Priester, C., Lefebvre, I., Allan, G., Lannoo, M., Moison, J. M., Lebouche, … MRS - Materials Research Society
4 国際会議録 AsGa-Asi-AsGa COMPLEX AS A MODEL OF EL2 CENTRE IN GaAs. FIGIELSKI,T. Trans Tech Publications	10 国際会議録 Role of silicon molecules and crystallites in the luminescence of porous silicon Delerue,C., Allan,G., Lannoo,M. Kluwer Academic Publishers
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