HYDROGEN INJECTION INTO p-TYPE SILICON BY CHEMICAL ETCHING

HYDROGEN INJECTION INTO p-TYPE SILICON BY CHEMICAL ETCHING

著者名:

掲載資料名:

Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

104

発行年:

1988

開始ページ:

285

終了ページ:

290

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837722 [0931837723]

言語:

英語

請求記号:

M23500/104

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015590
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

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1 国際会議録 DEGRADATION OF HYDROGEN-PASSIVATED p-TYPE LAYERS IN GaAs BY MINORITY CARRIER INJECTION AND REVERSE BIAS ANNEALING Tavendale, A. J., Pearton, S. J., Williams, A. A., Alexiev, D. Materials Research Society	7 国際会議録 Etching and Hydrogen Incorporation in ScAlMgO4 Brandle, C. D., Ren, F., Wilson, R. G., Lee, J. W., Pearton, S. J., Zavada, J. M. MRS - Materials Research Society
2 国際会議録 PASSIVATION OF n-TYPE SILICON BY HYDROGEN Bergman, K., Stavola, M., Pearton, S. J., Lopata, J. Materials Research Society	8 国際会議録 Deep Dry Etching of Silicon Using Bosch Type Process Guidini, V. O., Moshkalyov, S. A., Tatsch, P. J. Electrochemical Society
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