HYDROGEN NEUTRALIZATION OF CHALCOGEN DOUBLE DONOR CENTERS IN SINGLE-CRYSTAL SILICON

HYDROGEN NEUTRALIZATION OF CHALCOGEN DOUBLE DONOR CENTERS IN SINGLE-CRYSTAL SILICON

著者名:

掲載資料名:

Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

104

発行年:

1988

開始ページ:

241

終了ページ:

246

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837722 [0931837723]

言語:

英語

請求記号:

M23500/104

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015590
シリーズID:	PA00000011
会議名:	Symposium on defects in electronic materials
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

類似資料:

1 国際会議録 CHALCOGEN DOUBLE DONORS IN SILICON. PENSL,G., ROOS,G., HOLM,C., VAGNER,P. Trans Tech Publications	7 国際会議録 HYDROGEN PASSIVATION AND REACTIVATION OFDX CENTERS IN Se-DOPED AND Si-DOPED A1GaAs --A COMPARISON Roos, G., Johnson, N. M., Herring C., Harris Jr., J. S. Materials Research Society
2 国際会議録 Dissociation kinetics of hydrogen-neutralized Si donors and DX centers in AlGaAs Roos,G., Johnson,N.M., Herring,C., Harris,J.S. Trans Tech Publications	8 国際会議録 Depth Distribution of Diffused Hydrogen in n-Type GaAs Roos,G., Johnson,N.M., Herring,C., Walker,J. Trans Tech Publications
3 国際会議録 HYDROGEN NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON Johnson, N. M., Herring, C. Materials Research Society	9 国際会議録 DLTS-STUDIES ON THE "NEW OXYGEN DONOR"IN HEAT TREATED AND HYDROGENERATED Cz-GROWN Si Hoelzlien, Karlheinz, Pensl, G., Schulz, M., Johnson N.M. Materials Research Society
4 国際会議録 DONOR REACTIVATION KINETICS AND HYDROGEN REDISTRIBUTION IN THE SPACE CHARGE LAYER OF N-TYPE SILICON Wu, Y.-A., Roos, G., Johnson, N. M., Herring C. Materials Research Society	10 国際会議録 HYDROGEN PASSIVATION OF Si AND Be DOPANTS IN InAlAs Roos, G., Johnson, N. M., Pao, Y. C., Harris Jr., J. S. Materials Research Society
5 国際会議録 *ELECTRONIC DEFECTS IN SILICON AFTER TRANSIENT ISOTHERMAL ANNEALING Pensl, G., Schulz, M., Stolz, P., Johnson, N. M., Gibbons, J. F., Hoyt, J. L. North-Holland	11 国際会議録 The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers Newman,R.C., Davidson,B.R., Addinall,R., Murray,R., Emmert,J.W., Wagner,J., Gotz,W., Roos,G., Pensl,G. Trans Tech Publications
6 国際会議録 INFRARED STUDIES OF THE DOUBLE ACCEPTOR ZINC IN SILICON Dornen, A., Kienle, R., Thonke, K., Stolz, P., Pensl, G., Grunebau, D., Stolwijk, N.A. Materials Research Society	12 国際会議録 Electronic Raman Studies of Shallow Donors in Silicon Carbide Pusche, R., Hundhausen, M., Ley, L., Semmelroth, K., Pensl, G., Desperrier, P., Wellmann, P.J., Haller, E.E., Ager, … Trans Tech Publications

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