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STRAIN IN EPITAXIAL GaAs ON Si AND CaF2/Si

著者名:
Schowalter, L. J.
Hashimoto, Shin
Smith, G. A.
Gibson, W. M.
Lewis, N.
Hall, E. L.
Sullivan, P. W.
さらに 2 件
掲載資料名:
Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
102
発行年:
1988
開始ページ:
449
終了ページ:
454
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837708 [0931837707]
言語:
英語
請求記号:
M23500/102
資料種別:
国際会議録

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1 国際会議録 REDUCTION OF STRAIN IN EPITAXIAL GaAs ON CaF2/Si SUBSTRATES

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7 国際会議録 GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

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2 国際会議録 STRAIN IN EPITAXIAL GaAs ON CaF2/Si (111)

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4 国際会議録 SRAIN RELIEF BY TITLING OF EPITAXIAL GaAS FILMS ON Si

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10 国際会議録 The Effect of Strain Relaxation Mechanisms on the Electrical Properties of Epitaxial CaF2/Si(111) Heterostructures

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