HETEROEPITAXY OF GaAs BY MBE ON HIGH TEMPERATURE HYDROGEN ANNEALED NOMINALLY (100) ORIENTED SILICON | 東京工業大学附属図書館文献データベース

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HETEROEPITAXY OF GaAs BY MBE ON HIGH TEMPERATURE HYDROGEN ANNEALED NOMINALLY (100) ORIENTED SILICON

著者名:

Humphreys, T. P.

Posthill, J. B.

さらに 4 件

掲載資料名:

Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

102

発行年:

1988

開始ページ:

443

終了ページ:

448

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837708 [0931837707]

言語:

英語

請求記号:

M23500/102

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015588
シリーズID:	PA00000011
会議名:	Symposium on epitaxy of semiconductor layered structures
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.04

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1 国際会議録 MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs ON SILICON WITH BURIED IMPLANTED OXIDES Das, K., Humphreys, T. P., Posthill, J. B., Parikh, N., tarn, J., El-Masry, N., Bedair, S. M., Chu, W. K., Wortman, J. … Materials Research Society	7 国際会議録 RBS/CHANNELING AND TEM ANALYSIS OF HETEROEPITAXIAL Ge FILMS ON GaAs GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION Parikh, N. R., Hattangady, S. V., Posthill, J. B., King, M. L., Rudder, R. A., Vitkavage, D. J., Markunas, R. J., Chu, … Materials Research Society
2 国際会議録 MBE GROWTH AND CHARACTERIZATION OF SixGe1-x MULTILAYER STRUCTURES ON Si(100) FOR USE AS A SUBSTRATE FOR GaAs HETEROEPITAXY Posthill, J.B., Malta, D.P., Venkatasubramanian, R., Sharps, P.R., Timmons, M.L., Markunas, R.J., Humphreys, T.P., … Materials Research Society	8 国際会議録 MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF GaAs ON SAPPHIRE AND SILICON-ON-SAPPHIRE SUBSTRATES Humphreys, T. P., Parikh, N. R., Summerville, M. K., Sukow, C. A., Miner,. C. J. Materials Research Society
3 国際会議録 DEFECT REDUCTION IN GaAs EPILAYERS ON Si SUBSTRATES USING STRAINED LAYER SUPERLATTICES El-Masry, N., Hamaguchi, N., Tarn, J. C. L., Karam,. N., Humphreys, T. P., Moore, D., Bedair, S. M., Lee, J. W., … Materials Research Society	9 国際会議録 LOW-DEFECT-DENSITY Ge ON Si FOR LARGE-LATTICE-MISMATCHED SEMICONDUCTOR INTEGRATION AND STRAIN-ENGINEERED DEVICES Malta, D. P., Posthill, J. B., Enquist, P. M., Markunas, R. J., Humphreys, T. P., Parikh, N. R. Materials Research Society
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