BAND-EDGE LUMINESCENCE OF MOCVD GaAs GROWN DIRECTLY ON SILICON

BAND-EDGE LUMINESCENCE OF MOCVD GaAs GROWN DIRECTLY ON SILICON

著者名:

掲載資料名:

Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

102

発行年:

1988

開始ページ:

229

終了ページ:

232

総ページ数:

4

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837708 [0931837707]

言語:

英語

請求記号:

M23500/102

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015588
シリーズID:	PA00000011
会議名:	Symposium on epitaxy of semiconductor layered structures
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.04

類似資料:

1 国際会議録 LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si Wilson, B. A., Bonner, C. E., Harris, T. D., Lamont, M. G., Miller, R. C, Sputz, S. K., Vermon, S. M., Haven, V. E., … Materials Research Society	7 国際会議録 Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source Hobson,W.S., McAfee,S.R., Jones,K.S., Paroskevopoulos,N.C., Abernathy,C.R., Sputz,S.K., Harris,T.D., Schnoes,M.Lamont, … Trans Tech Publications
2 国際会議録 IMPROVED MOCVD GROWTH OF GaAs ON Si Lum, R. M., Klingert, J. K., Davidson, B,. A., Lamont, M. G. Materials Research Society	8 国際会議録 QUANTITATIVE RAMAN SCATTERING FROM ACCEPTORS IN GaAs Harris, T. D., Lamont, M. G., Seibles, L. Materials Research Society
3 国際会議録 NEAR GAP PHOTOLUMINESCENCE OF GaAs GROWN DIRECTLY ON InP Schnoes, Lamoni M., Harris, T. D., Hobson, W. S., Lum., R. M., Klingent, J. K. Materials Research Society	9 国際会議録 EFFECTS OF EXCIMER LASER IRRADIATION ON MBE AND MO-MBE GROWTHS OF (Al)GaAs ON GaAs AND (Ca,Sr)F2/GaAs SUBSTRATES Donnelly, V. M., Tu, C. W., Beggy, J. C., McCrary, V. R., Harris, T. D., Lamont, M. G., Baiocchi, F. A., Farrow, R. C. Materials Research Society
4 国際会議録 *ALTERNATIVE CHEMISTRIES FOR MOCVD GROWTH OF III-V MATERIALS Lum, R. M., Klingert, J. K. Materials Research Society	10 国際会議録 SPATIAL INHOMOGENEITIES OF THE LUMINESCENCE AND ELECTRICAL PROPERTIES OF MBE GROWN GaAs ON Si Reid, G.A., Nauka, K., Rosner, S.J., Koch, S.M., Harris, Jr., J.S. Materials Research Society
5 国際会議録 COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY … Awal, Abdul M., Lee, E. H., Chan, E. Y., Lum R. M., Klingert, J. K., Sheng, T. T., Hopkins, L. C., Opila, R. L. Materials Research Society	11 国際会議録 FEMTOSECOND PROBE-PROBE TRANSMISSION STUDIES OF LT-GROWN GaAs NEAR THE BAND EDGE Radousky, H. B., Bello, A. F., Erskine, D. J., Dinh, L. N., Bennahmias, M. J., Perry, M. D., Ditmire, T. R., Mariela, R. … MRS - Materials Research Society
6 国際会議録 COMPARISON OF LOW VAPOR PRESSURE ORGANOARSENIC COMPOUNDS FOR MOVPE GROWTH OF GaAs Lum, R. M., Klingert, J. K. Materials Research Society	12 国際会議録 ORIGIN OF THE INFRARED BAND FROM POROUS SILICON Mauckner, G., Hamann, J., Rebitzer, W., Baier, T., Thonke, K., Sauer, R. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12