CHARACTERIZATION OF Mn-DOPED In1-XGaxAsyP1-Y GROWN BY LPEE

CHARACTERIZATION OF Mn-DOPED In1-XGaxAsyP1-Y GROWN BY LPEE

著者名:

掲載資料名:

Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

102

発行年:

1988

開始ページ:

201

終了ページ:

208

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837708 [0931837707]

言語:

英語

請求記号:

M23500/102

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015588
シリーズID:	PA00000011
会議名:	Symposium on epitaxy of semiconductor layered structures
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.04

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