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OBSERVATION OF GaAs/Si INTERFACE BY TEM: EFFECT OF ANNEALING ON THE STRUCTURE

著者名:
Heral, H.
Rocher, A.
Charasse, M. N.
Georgakilas, A.
Chazelas, J.
Hirtz, J. P.
Blanck, H.
Siejka, J.
さらに 3 件
掲載資料名:
Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
102
発行年:
1988
開始ページ:
51
終了ページ:
56
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837708 [0931837707]
言語:
英語
請求記号:
M23500/102
資料種別:
国際会議録

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