ISLANDING AND SURFACE DIFFUSION IN SEMICONDUCTOR HETEROEPITAXY: Ge ON Si

ISLANDING AND SURFACE DIFFUSION IN SEMICONDUCTOR HETEROEPITAXY: Ge ON Si

著者名:

掲載資料名:

Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

102

発行年:

1988

開始ページ:

25

終了ページ:

30

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837708 [0931837707]

言語:

英語

請求記号:

M23500/102

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015588
シリーズID:	PA00000011
会議名:	Symposium on epitaxy of semiconductor layered structures
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.04

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2 国際会議録 ISLAND FORMATION IN Ge ON Si HETEROEPITAXY Eaglesham, D. J., Cossmann, H.-J., Cerullo, M. Materials Research Society	8 国際会議録 MICROSTRUCTURAIJ CHARACTERIZATION OF Ba2YCu3O7 FILMS PRODUCED BY CO-EVAPORATION Fisanick, G. J., Mankiewich, P., Skocpol, W., Howard, R. E., Dayem, A., Fleming, R. M., White, A. E., Liou, S. H., … Materials Research Society
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