RHEED INTENSITY OSCILLATION STUDIES OF THE KINETICS OF GaAs DEPOSITION DURING CHEMICAL BEAM EPITAXY (CBE)
- 著者名:
- 掲載資料名:
- Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 102
- 発行年:
- 1988
- 開始ページ:
- 17
- 終了ページ:
- 24
- 総ページ数:
- 8
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837708 [0931837707]
- 言語:
- 英語
- 請求記号:
- M23500/102
- 資料種別:
- 国際会議録
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9
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ENHANCEMENTS IN TWO DIMENSIONAL ELECTRON GAS DENSITY AND MOBILITY IN δ-DOPED AlGaAs HETEROSTRUCTURES
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