MEASUREMENT OF PLASMA ETCH-INDUCED DAMAGE TO SILICON BENEATH SiO2 LAYER: EFFECTIVE RANGE OF PLASMA ETCH DAMAGE THROUGH SiO2

MEASUREMENT OF PLASMA ETCH-INDUCED DAMAGE TO SILICON BENEATH SiO2 LAYER: EFFECTIVE RANGE OF PLASMA ETCH DAMAGE THROUGH SiO2

著者名:

掲載資料名:

Plasma processing and synthesis of materials : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

98

発行年:

1987

開始ページ:

299

終了ページ:

306

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837654 [0931837650]

言語:

英語

請求記号:

M23500/98

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015584
シリーズID:	PA00000011
会議名:	Symposium on plasma processing and synthesis of materials
回次:	1987
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

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