*GROWTH, DOPING, DEVICE DEVELOPMENT AND CHARACTERIZSATION OF CVD BETA-SiC EPILAYERS ON Si (100) AND ALPHA-SiC (0001)

*GROWTH, DOPING, DEVICE DEVELOPMENT AND CHARACTERIZSATION OF CVD BETA-SiC EPILAYERS ON Si (100) AND ALPHA-SiC (0001)

著者名:

Kong, H.

掲載資料名:

Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

97

発行年:

1987

開始ページ:

233

終了ページ:

246

総ページ数:

14

出版情報:

Pittsburgh, Penn.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837647 [0931837642]

言語:

英語

請求記号:

M23500/97

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015583
シリーズID:	PA00000011
会議名:	Symposium on novel refractory semiconductors
回次:	1987
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

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