RAPID ISOTHERMAL ANNEALING OF N-IMPLANTED 6H-SiC LAYERS USED FOR FABRICATION OF p-n PHOTODIODES

RAPID ISOTHERMAL ANNEALING OF N-IMPLANTED 6H-SiC LAYERS USED FOR FABRICATION OF p-n PHOTODIODES

著者名:

掲載資料名:

Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

97

発行年:

1987

開始ページ:

195

終了ページ:

200

総ページ数:

6

出版情報:

Pittsburgh, Penn.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837647 [0931837642]

言語:

英語

請求記号:

M23500/97

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015583
シリーズID:	PA00000011
会議名:	Symposium on novel refractory semiconductors
回次:	1987
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

類似資料:

1 国際会議録 Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method Sadowski, H., Schulze, N., Frank, T., Laube, M., Pensl, G., Helbig, R. Trans Tech Publications	7 国際会議録 Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions Ohshima, T., Uedono, A., Itoh, H., Yoshikawa, M., Kojima, K., Okada, S., Nashiyama, I., Abe, K., Tanigawa, S., Frank, … Trans Tech Publications
2 国際会議録 Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC Yan, F., Devaty, R. P., Choyke, W. J., Gali, A., Schmid, F., Pensl, G., Wagner, G. Trans Tech Publications	8 国際会議録 Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes Negoro, Y., Kimoto, T., Matsunami, H., Pensl, G. Trans Tech Publications
3 国際会議録 Midgap Defects in 4H-, 6H- and 3C-SiC Detected by Deep Level Optical Spectroscopy Reshanov, S.A., Schneider, K., Helbig, R., Pensl, G., Nagasawa, H., Schoner, A. Trans Tech Publications	9 国際会議録 *ELECTRONIC DEFECTS IN SILICON AFTER TRANSIENT ISOTHERMAL ANNEALING Pensl, G., Schulz, M., Stolz, P., Johnson, N. M., Gibbons, J. F., Hoyt, J. L. North-Holland
4 国際会議録 Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing Pecz, B., Klettke, O., Pensl, G., Stoemenos, J. Trans Tech Publications	10 国際会議録 1.54 ｦﾌm Photoluminescence and Electroluminescence in Erbium Implanted 6H SiC Yoganathan, M., Choyke, W. J., Devaty, R. P., Pensl, G., Edmond, J. A. MRS - Materials Research Society
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