Blank Cover Image

a-SI MOS FET WITH NATIVE-OXIDE GATE GROWN BY NORMAL-PRESSURE AND LOW-TEMPERATURE THERMAL-OXIDATION METHOD

著者名:
掲載資料名:
Amorphous silicon semiconductors -- Pure and hydrogenated : symposium held April 21-24, 1987, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
95
発行年:
1987
開始ページ:
463
終了ページ:
468
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837623 [0931837626]
言語:
英語
請求記号:
M23500/95
資料種別:
国際会議録

類似資料:

1 国際会議録 Low-Temperature Formation of Ultrathin SiO2 Layers Using Direct Oxidation Method in a Catalytic Chemical Vapor Deposition System

Izumi, A., Sohara, S., Kudo, M., Matsumura, H.

MRS - Materials Research Society
7 国際会議録 Ultrathin MOS Gate Insulators: Surface Prepa-ration, Growth, and Interface Control

Nishioka, Y., Komeda, T., Namba, K., Matsumura, M., Sakoda, T., Kubota, T., Yamashita, Y., Kobayashi, H.

Electrochemical Society
2 国際会議録 Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

Izumi, A., Ichise, T., Matsumura, H.

MRS - Materials Research Society
8 国際会議録 Characterization of GaN MOS Structures Using Photoanodically Grown Oxides With Respect to FET Devices

Mistele, D., Rotter, T., Ferretti, R., Fedler, F., Klausing, H., Semchinova, O. K., Stemmer, J., Aderhold, J., Graul, J.

Materials Research Society
3 国際会議録 Ultrathin High-Quality Silicon Nitride Gate Dielectrics Prepared by Catalytic Chemical Vapor Deposition at Low Temperatures

Sato, H., Izumi, A., Matsumura, H.

MRS - Materials Research Society
9 国際会議録 PROCESS UNIFORMITY AND ELECTRICAL CHARACTERISTICS OF THIN GATE DIELECTRICS GROWN BY RANOED-TEMPERATURE TRANSIENT RAPID THERMAL OXIDATION OF SILICON

Moslehi, Mehrdad M., Kermani, Ahmad

Materials Research Society
4 国際会議録 Fabrication and low temperature transport studies of sub-micron, in-plane gated FETs defined by low energy ion exposure

Andrews, C. C., Spencer, G. F., Li, F., Weichold, M. H., Kirk, W. P.

MRS - Materials Research Society
10 国際会議録 Native Defects in Low Temperature GaAs and the Effect of Hydrogenation

Pritchard, R. E., McQuaid, S. A., Newman, R. C., Makinen, J., Bardeleben, H. J. von, Missous, M.

MRS - Materials Research Society
5 国際会議録 Low Temperature Nitridation of Si Surface Using Gas Decomposition Reaction in CAT-CVD Method

Izumi, A., Masuda., A., Matsumura, H.

Electrochemical Society
11 国際会議録 a-Si FETS WITH IMPROVED ON/OFF CHARACTERISTICS

Uchida, Y., Matsumura, M

Materials Research Society
6 国際会議録 Low Temperature Electrical Performance of Ultrathin Oxide MOS Capacitors with p+ poly-Si1-x Gex and poly-Si Gate Materials

Jacob, A.P., Myrberg, T., Yousif, M.Y.A., Nur, O., Willander, M.

SPIE-The International Society for Optical Engineering
12 国際会議録 APPICATION OF TWO-STEP DEPOSITION METHOD TO ULTRA-THIN a-Si FET's

Katoh, Y., Sugiura, O., Takeuchi, Y., Uchida, Y., Matsumura, M.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12