DEFECTS ANNEALING OF Si+ IMPLANTED GaAs AT RT AND 100°C

DEFECTS ANNEALING OF Si+ IMPLANTED GaAs AT RT AND 100°C

著者名:

掲載資料名:

Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

93

発行年:

1987

開始ページ:

67

終了ページ:

72

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837609 [093183760X]

言語:

英語

請求記号:

M23500/93

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015579
シリーズID:	PA00000011
会議名:	Symposium on materials modification and growth using ion beams
回次:	1987
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

類似資料:

1 国際会議録 MISORIENTED EPITAXIAL GROWTH OF (111)CoSi2 ON OFFSET (111)Si SUBSTRATES Bai, Gang, Jamieson, David N., Nicolet, Marc-A., Vreeland Jr., Thad Materials Research Society	7 国際会議録 STEADY-STATE VERSUS RAPID THERMAL ANNEALING OF PHOSPHORUS-IMPLANTED PSEUDOMORPHIC Si(100)/Ge0.12Si0.88 Lie, D. Y. C., Song, J. H., Theodore, N. D., Eisen, F., Nicolet, M. -A., Carns, T. K., Wang, K. L., Kinoshita, H., … MRS - Materials Research Society
2 国際会議録 STRAIN AND DAMAGE MEASUREMENTS IN ION IMPLANTED AlXGal-XAs/GaAs SUPERLATTICES Hamdi, A. H., Tandon, J. L., Vreeland Jr., T., Nicolet, M. A. Materials Research Society	8 国際会議録 X-RAY DIFFRACTION DETERMINATION OF STRESSES IN THIN FILMS Vreeland, Jr. T., Dommann, A., Tsai, C.-J., Nicolet, M.-A. Materials Research Society
3 国際会議録 AMORPHIZATION AND RECRYSTALLIZATION IN MeV ION IMPLANTED InP CRYSTALS Xiong, Fulin, Neih, C. W., Jamieson, D. N., Vreeland Jr., T., Tombrello, T. A. Materials Research Society	9 国際会議録 MBE GROWTH OF GaAs ON POROUS SILICON Lin, T. L., Sadwick, L., Wang., K. L., Rhee, S. S., Kao, Y. C., Hull, R, Nieh, C. W., Jamieson, D. N., Liu, J. K., … Materials Research Society
4 国際会議録 FORMATION OF BURIED OXIDE IN MEV OXYGEN IMPLANTED SILICON Nieh, C. W., Xiong, F., Ahn, C. C., Zhou, Z., Jamieson, D. N., Vreeland Jr., T., Fultz, B., Tombrello, T. A. Materials Research Society	10 国際会議録 STUDY OF BORON IMPLANTATION IN CdTe Jamieson, D. N., Bowman Jr., R. C., Adams, P. M., Knudsen, J. F., Downing R. G. Materials Research Society
5 国際会議録 ON THE CRITIAL LAYER THICKNESS OF STRAINED-LAYER HETERO-EPITAXIAL CoSi2 FILMS ONF < 111 > Si Jamieson, D. N., Bai, G., Kao, Y. C., Nieh, C. W., Nicolet, M-A., Wang, K. L. Materials Research Society	11 国際会議録 Dopant activation and epitaxial regrowth in p-implanted pseudomorphic Ge0.12Si0.88 layers on Si(100) Lie, D. Y. C., Carns, T. K., Theodore, N. D., Eisen, F., Nicolet, M. -A., Wang, K. L. MRS - Materials Research Society
6 国際会議録 Defects and diffusion in Si+ implanted GaAs Jones, K. S., Robinson, H. G., Haynes, T. E., Deal, M. D., Lee, C. C., Allen, E. L. MRS - Materials Research Society	12 国際会議録 GENERATION OF DEFECTS AND STRAIN BY ION IMPLANTATION IN Ge(100) SINGLE CRYSTALS, AND IN PSEUDOMORPHIC GeXSi1-X FILMS GROWN ON Si(100) Lie, D. Y. C., Vantomme, A., Eisen, F., Nicolet, M.-A., Arbet-Engets, V., Wang, K. L. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12