*DEFECT STRUCTURES AND ELETRICAL BEHAVIOR OF RAPID THERMALLY ANNEALED ION IMPLANTED SILICON
- 著者名:
- Sadana, D. K.
- 掲載資料名:
- Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 92
- 発行年:
- 1987
- 開始ページ:
- 319
- 終了ページ:
- 328
- 総ページ数:
- 10
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837593 [0931837596]
- 言語:
- 英語
- 請求記号:
- M23500/92
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
North-Holland |
Materials Research Society | |
3
国際会議録
A COMPARISON OF DIFFERENT TECHNIQUES FOR THE RAPID THERMAL ANNEALING OF ION IMPLANTS IN SILICON
Materials Research Society |
Materials Research Society |
North Holland |
Trans Tech Publications |
Materials Research Society | |
North-Holland |
12
国際会議録
DEFECT STATES INDUCED BY RAPID THERMAL ANNEALING IN VIRGIN OR IMPLANTED CZOCHRALSKY-GROWN SILICON
Materials Research Society |