GROWTH OF SINGLE CRYSTAL TYPE A AND TYPE B CoXNi1-XSi2 LAYERS ON Si (111)

GROWTH OF SINGLE CRYSTAL TYPE A AND TYPE B CoXNi1-XSi2 LAYERS ON Si (111)

著者名:

掲載資料名:

Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

91

発行年:

1987

開始ページ:

451

終了ページ:

456

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837586 [0931837588]

言語:

英語

請求記号:

M23500/91

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015577
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	2nd
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

類似資料:

1 国際会議録 ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON Wu, M. F., Wachter, J. De, Bavel, A.-M. Van, Pattyn, H., Langouche, G., Vanhellemont, J., Bender, H., Temst, K., Wuyts, … MRS - Materials Research Society	7 国際会議録 MESOTAXY: SINGLE-CRYSTAL GROWTH OF BURIED SILICIDE LAYERS White, Alice E.., Short, K.. T., Dynes, R. C., Garno, J. P., Gibson, J. M. Materials Research Society
2 国際会議録 ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON Wu, M. F., Wachter, J. De, Bavel, A.-M. Van, Pattyn, H., Langouche, G., Vanhellemont, J., Bender, H., Temst, K., Wuyts, … MRS - Materials Research Society	8 国際会議録 THE EFFECT OF SURFACE STRUCTURE ON THE EPITAXIAL GROWTH OF Si ON CoSi2 (111) Tung, R. T., Hellman, F Materials Research Society
3 国際会議録 ULTRATHIN SINGLE CRYSTAL CoSi2 LAYERS ON Si (111) AND Si (100) Tung, R. T., Batstone, J. L., Yalisove, S. M. Materials Research Society	9 国際会議録 GROWTH OF SINGLE CRYSTAL Si/NiSi2/Si(100) AND SiCoSi2/Si(100) STRUCTURES BY MOLECULAR BEAM EPITAXY AND FURNACE ANNEALING Tung, R.T., Eaglesham, D.J., Schrey, F., Sullivan, J.P. Materials Research Society
4 国際会議録 THE GROWTH OF EPITAXIAL NiSi2 SINGLE CRYSTALS ON SILICON BY THE USE OF TEMPLATE LAYERS Teng, R. T., Gibson, J. M., Poate, J. M. North-Holland	10 国際会議録 Transport studies in single-crystal films of CoSi2 and NiSi2 Hensel, J. C., Tung, R. T., Poate, J. M., Unterwald, F. C., Jacobson, D. C. North-Holland
5 国際会議録 IN-SITU STUDIES OF THE MBE GROWTH OF GoSi2 ON Si (111) IN A UHV TRANSMISSION ELECTRON MICROSCOPE Gibson, J M., Batstone, J. L., Tung, R. T. Materials Research Society	11 国際会議録 The Effects of Nucleation and Growth on Epitaxy in the CoSi2/Si System Gibson, J. M., Bean, J. C., Poate, J. M., Tung, R. T. North-Holland
6 国際会議録 MESOTAXY: GROWTH OF BURIED SINGLE-CRYSTAL CoSi2 LAYERS BY IMPLANTATION White, Alice E., Short, K.T., Dynes, R.C., Garno, J.P., Gibson, J.M. Materials Research Society	12 国際会議録 GROWTH AND EPITAXIAL CoSi2 AND NiSi2 ON (111), (100) AND (110) Si AT ROOM TEMPERATURE Tung, R.T., Schrey, F. Materials Research Society

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