COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY MOCVD

COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY MOCVD

著者名:

Awal, Abdul M.

掲載資料名:

Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

91

発行年:

1987

開始ページ:

241

終了ページ:

248

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837586 [0931837588]

言語:

英語

請求記号:

M23500/91

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015577
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	2nd
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

類似資料:

1 国際会議録 THE EFFECT OF RAPID THERMAL TREATMENT ON THE STRUCTURAL OPTOELECTRONIC PROPERTIES OF EPITAXIAL GaAs ON Si GROWN WITH OR WITHOUT Ge INTERMEDIATE LAYERS Lee, El-Hang, Awal, Abdul M., Chan, E. Y., Opila, R. L., Jacobson, D. C., Pearton,. S. J. Materials Research Society	7 国際会議録 MATERIAL CHARACTERIZATION OF EPITAXIAL GAAS AND Ge FILMS ON (100) Si SUBSTRATES AddulAwal M., Lee, El Hang, Koos, G.L., Chan, E.Y., Celler, G.k., Sheng, T.T. Materials Research Society
2 国際会議録 BAND-EDGE LUMINESCENCE OF MOCVD GaAs GROWN DIRECTLY ON SILICON Lamont, M. G., Harris, T. D., Sauer, R., Lum, R. M., Klingert, J. K. Materials Research Society	8 国際会議録 COMPARISON OF LOW VAPOR PRESSURE ORGANOARSENIC COMPOUNDS FOR MOVPE GROWTH OF GaAs Lum, R. M., Klingert, J. K. Materials Research Society
3 国際会議録 IMPROVED MOCVD GROWTH OF GaAs ON Si Lum, R. M., Klingert, J. K., Davidson, B,. A., Lamont, M. G. Materials Research Society	9 国際会議録 Photoluminescence of Zn Doped and Si Doped GaAs Epitaxial Layers Grown by MOCVD Hudait,M.K., Modak,P., Hardikar,S., Rao,K.S.R.K., Krupanidhi,S.B. Narosa Publishing House
4 国際会議録 EFFECT OF SUBSTRATE MISORIENTATION ON THE STRUCTURAL STRAIN AND DEFECT DISTRIBUTION OF MOCVD GROWN GaAs ON SI Hsieh, K.C., Feng, M.S., Stillman, G.E., Ito, C.R., McIntyre, D.G., Kaliski, R.W., Feng, M. Materials Research Society	10 国際会議録 Optoelectronic Devices on GaAs/Si Grown by MOCVD Technique Egawa, T., Hasegawa, Y., Jimbo, T., Umeno, M. Electrochemical Society
5 国際会議録 LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si Wilson, B. A., Bonner, C. E., Harris, T. D., Lamont, M. G., Miller, R. C, Sputz, S. K., Vermon, S. M., Haven, V. E., … Materials Research Society	11 国際会議録 Etch Pit Observation of Ga1-xInxAs Epitaxial Layers Grown on GaAs and InP Substrates Pal,R., Radhakrishnan,J.K., Agarwal,S.K., Bose,D.N. Narosa Publishing House
6 国際会議録 *ALTERNATIVE CHEMISTRIES FOR MOCVD GROWTH OF III-V MATERIALS Lum, R. M., Klingert, J. K. Materials Research Society	12 国際会議録 Electrical Properties of Organometallic Vapour Phase Epitaxial GaAs Grown on Si Substrates Leitch,A.W.R., Alberts,V., Neethling,J.H. Trans Tech Publications

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