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ELECTICAL CHARACTERIZATION OF DEFECTS IN GaAs GROWN ON Si BY MBE

著者名:
掲載資料名:
Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
91
発行年:
1987
開始ページ:
233
終了ページ:
240
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837586 [0931837588]
言語:
英語
請求記号:
M23500/91
資料種別:
国際会議録

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