THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS
- 著者名:
- 掲載資料名:
- Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 91
- 発行年:
- 1987
- 開始ページ:
- 91
- 終了ページ:
- 98
- 総ページ数:
- 8
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837586 [0931837588]
- 言語:
- 英語
- 請求記号:
- M23500/91
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
SUPPRESSION OF DEFECT PROPAGATION IN HETEROEPITAXIAL STRUCTURES BY STEAINED LAYER SUPERLATTICES
Kluwer Academic Publishers |
MRS - Materials Research Society |
Materials Research Society |
8
国際会議録
Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |
10
国際会議録
ELECTRICAL AND STRUCTURAL PROPERTIES OF Ti CONTACTS ON AN ATOMICALLY CLEAN N-TYPE GaAs SURFACE
Materials Research Society |
Materials Research Society |
Materials Research Society |
6
国際会議録
STRUCTURE AND ELECTRONIC PROPERTIES OF MISFIT DISLOCATIONS IN ZnSe/GaAs(001) HETEROJUNCTIONS
MRS - Materials Research Society |
MRS - Materials Research Society |