RESIDUAL STRESS IN GaAs LAYER GROWN ON 4°-OFF (100)Si BY MBE

RESIDUAL STRESS IN GaAs LAYER GROWN ON 4°-OFF (100)Si BY MBE

著者名:

Yao, T.

掲載資料名:

Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

91

発行年:

1987

開始ページ:

63

終了ページ:

68

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837586 [0931837588]

言語:

英語

請求記号:

M23500/91

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015577
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	2nd
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

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