*THE NUCLEATION AND GROWTH OF GaAs ON SI

*THE NUCLEATION AND GROWTH OF GaAs ON SI

著者名:

掲載資料名:

Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

91

発行年:

1987

開始ページ:

3

終了ページ:

14

総ページ数:

12

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837586 [0931837588]

言語:

英語

請求記号:

M23500/91

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015577
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	2nd
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

類似資料:

1 国際会議録 GaAs/Si NUCLEATION AND BUFFER LAYER GROWTH Koch, Stephanie M., Hull, Robert, Rosner, S. Jeffrey, Harris, Jr., Janes S. Materials Research Society	7 国際会議録 DEEP ELECTRON TRAPS IN MBE GaAs ON Si Nauka, K., Reid, G. A., Rosner, S. J., Koch, S. M., Harris Jr., J. S. Materials Research Society
2 国際会議録 NUCLEATION OF GaAs ON VICINAL Si (100) SURFACES Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S. M., Harris Jr., J. S. Materials Research Society	8 国際会議録 SPATIAL INHOMOGENEITIES OF THE LUMINESCENCE AND ELECTRICAL PROPERTIES OF MBE GROWN GaAs ON Si Reid, G.A., Nauka, K., Rosner, S.J., Koch, S.M., Harris, Jr., J.S. Materials Research Society
3 国際会議録 STRUCTURAL STUDIES OF NUCLEATION AND THE INITIAL STAGES OF GROWTH OF EPITAXIAL GaAs ON Si(100) SUBSTRATES Hull, R., Fischer-Colbrie, A., Rosner, S. J., Koch, S. M., Harris, J. S. Materials Research Society	9 国際会議録 GROWTH OF GALLIUM ARSENIDE ON SILICON IN MASKED, ETCHED TRENCHES Adkisson, J.W., Kamins, T.I., Koch, G.M., Harris, Jr., J.S., Rosner, S.J., Nauka, K., Reid, G.A. Materials Research Society
4 国際会議録 THE GROWTH OF GaAS ON Si BY MOLECULAR BEAM EPITAXY Koch, S.M., Rosner, S.J., Schlom, Darrell, Harris, J. Jr. S. Materials Research Society	10 国際会議録 Growth of GaAs and InAlAs on High Quality, Epitaxial, NiAl Metal Film Hung, C. -Y., Weckwerth, M. V., Visokay, M. R., Pao, Y. C., Harris, J. S., Jr. MRS - Materials Research Society
5 国際会議録 MICROSTRUCTURE OF THIN LAYERS OF MBE-GROWTH GaAS ON Si SUBSTRATES Rosner, S.J., Koch, S.M., Lederman, S., Harris, J.Jr. S. Materials Research Society	11 国際会議録 GRADED BUFFER LAYERS FOR MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH In CONTENT InGaAs ON GaAs FOR OPTOELECTRONICS Lord, S.M., Pezeshki, B., Marshall, A.F., Harris, Jr., J.S., Fernandez, R., Harwit, A. Materials Research Society
6 国際会議録 STRUCTURAL CHARACTERIZATION OF THIN, LOW TEMPERATURE FILMS OF GaAs ON Si SUBSTRATES Rosner, S. J., Koch, S. M., Harris Jr., J. S. Materials Research Society	12 国際会議録 NUCLEATION AND GROWTH PROCESSES IN OMCVD OF GaAs Shastry, S. K., Hefter, J. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12