*ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES

*ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES

著者名:

掲載資料名:

Materials for infrared detectors and sources : symposium held December 1-5, 1986, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

90

発行年:

1987

開始ページ:

199

終了ページ:

208

総ページ数:

10

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837555 [0931837553]

言語:

英語

請求記号:

M23500/90

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015576
シリーズID:	PA00000011
会議名:	Symposium on materials for infrared detectors and sources
回次:	1986
会議開催地:	Boston, MA, USA
会議開催年:	1986.12.01-1986.12.05

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