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STRUCTURAL STUDIES OF NUCLEATION AND THE INITIAL STAGES OF GROWTH OF EPITAXIAL GaAs ON Si(100) SUBSTRATES

著者名:
掲載資料名:
Characterization of defects in materials : symposium held December 1-2, 1986, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
82
発行年:
1987
開始ページ:
355
終了ページ:
360
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837470 [0931837472]
言語:
英語
請求記号:
M23500/82
資料種別:
国際会議録

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