Blank Cover Image

THE DIFFUSION OF PHOSPHORUS AND INDIUM INTO GALLIUM ARSENIDE FROM POLYCRYSTALLINE-SILICON

著者名:
掲載資料名:
Interfaces, superlattices, and thin films : symposium held December 1-6, 1986, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
77
発行年:
1987
開始ページ:
785
終了ページ:
790
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837562 [0931837561]
言語:
英語
請求記号:
M23500/77
資料種別:
国際会議録

類似資料:

1 国際会議録 VACANCY DIFFUSION AT POLYSILICON ENCAPSULATED GaAs SURFACES

Kavanagh, K. L., Magee, C. W., Sheets, J.

Materials Research Society
7 国際会議録 Modeling dopant diffusion in Gallium arsenide

Deal, M. D., Hu, C. J., Lee, C. C., Robinson, H. G.

MRS - Materials Research Society
2 国際会議録 GROWTH OF GALLIUM ARSENIDE ON SILICON IN MASKED, ETCHED TRENCHES

Adkisson, J.W., Kamins, T.I., Koch, G.M., Harris, Jr., J.S., Rosner, S.J., Nauka, K., Reid, G.A.

Materials Research Society
8 国際会議録 GROWTH AND CHARACTERIZATION OF InXGa1-XP (x-0.38) ON GaP(100) WITH A LINEARLY GRADED BUFFER LAYER BY GAS-SOURCE MOLECULAR BEAM EPITAXY

Chin, T.P., Chang, J.C.P., Kavanagh, K.L., Tu, C.W., Kirchner, P.D., Woodall, J.M.

Materials Research Society
3 国際会議録 Diffusion of arsenic and phosphorus in laser-processed-polycrystalline-silicon-thin-films

Baumgart, H., Leamy, H.J., Trimble, L.E., Doherty, C.J., Celler, G.K.

North-Holland
9 国際会議録 Indium gallium arsenide photodiode arrays for optical communications

Cohen,M.J., Brubaker,R.M., Dries,J.C., Ettenberg,M.H.

SPIE-The International Society for Optical Engineering
4 国際会議録 PHOSPHORUS DIFFUSION IN POLYCRYSTALLINE SILICON: MONTE CARLO SIMULATION OF EXPERIMENTAL DIFFUSION PROFILES

Lavine, J. P., Lee, S. -T., Black, D. L., Losee, D. L., Jarman, C. M.

Materials Research Society
10 国際会議録 ENCHANCED DIFFUSION OF PHOSPHORUS AT GRAIN BOUNDARIES IN SILICON

Cheng, L. J., Shyu, C. M., Stika, K. M.

North-Holland
5 国際会議録 Effect of Ion Enery and Dose on the Diffusion of Silicon Implanted into Gallium Arsenide

C. C. Lee, M. D. Deal, J. C. Bravman

Electrochemical Society
11 国際会議録 CHRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY PULSED ION BEAM ANNEALING

Gyulai, J., Fastow, R., Kavanagh, K., Thompson, M. O., Palmstrom, C. J., Hewett, C. A., Mayer, J, W,

North-Holland
6 国際会議録 New traps for H｡?in boron- and phosphorus-doped silicon

Korpas,L., Corbett,J.W., Estreicher,S.K.

Trans Tech Publications
12 国際会議録 PROPERTIES OF PATTERNED GALLIUM ARSENIDE ON SILICON

Matyi, R.J., Shichijo, H., Kim, T.S., Tsai, H.L.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12