Ge AND GeSi HETEROEPITAXY ON Si(100) BY MBE

Ge AND GeSi HETEROEPITAXY ON Si(100) BY MBE

著者名:

Houghton, D.C.

掲載資料名:

Interfaces, superlattices, and thin films : symposium held December 1-6, 1986, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

77

発行年:

1987

開始ページ:

411

終了ページ:

416

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837562 [0931837561]

言語:

英語

請求記号:

M23500/77

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015562
シリーズID:	PA00000011
会議名:	Symposium on interfaces, superlattices, and thin films
回次:	1986
会議開催地:	Boston, MA, USA
会議開催年:	1986.12.01-1986.12.06

類似資料:

1 国際会議録 CHARACTERIZATION OF GaAs AND Ge FILMS ON (100) SILICON Baribeau, J. _M., Houghton, D. C., Maigne, P., Moore, W. T., Devine, R. L. S., Denhoff, M. W., Stoner, R. J., McCaffrey, … Materials Research Society	7 国際会議録 Si-BASED PHOTONIC DEVICES BY MBE Houghton, D.C., Noel, J.-P., Rowell, N.L. Materials Research Society
2 国際会議録 ELECTRICAL AND OPTICAL PROPERTIES OF ERBIUM IN MBE SILICON AND Si/Ge ALLOYS Efeoglu, H., Evans, J.H., Langer, J.M., Peaker, A.R., Rowell, N.L., Noel, J.-P., Perovic, D.D., Jackman, T.E., Houghton, … Materials Research Society	8 国際会議録 *SiGe/Si QUANTUM WELLS BY MBE: A PHOTOLUMINESCENCE STUDY Houghton, D.C., Rowell, N.L., Noel, J.-P., Aers, G., Davies, M., Wang, A., Perovic, D.D. Materials Research Society
3 国際会議録 THE INFLUENCE OF STRAIN-MEDIATED MORPHOLOGICAL CHANGES ON THE STRUCTURAL AND OPTICAL PROPERTIES OF MBE-GROWN GeSi/Si Perovic, D.D., Whitehurst, J., Noel, J.P., Rowell, N.L., Houghton, D.C. Materials Research Society	9 国際会議録 DISLOCATION NUCLEATION IN GeSi/Si (100) STRAINED EPILAYERS Eagleshham, D.J., Evam, E.P., Maher, D.M., Humphreys, C.J., Bean, J.C. Materials Research Society
4 国際会議録 CHARACTERIZATION OF Si MBE LAYERS DOPED IN SITU BY As ION BEAMS Swanson, Max L., Parikh, N. R., Jackman, T. E., Houghton, D. C., Denhoff, M. W. Materials Research Society	10 国際会議録 Ge HETEROEPITAXY ON (100) Si SUBSTRATES BY ION ASSISTED DEPOSITION Holesinger, T.G., Heim, D.J., Lakin, K.M., Shanks, H.R. Materials Research Society
5 国際会議録 Ge GaAs AND inSBHETEROEPITAXY ON ( 100 ) Si Houghton.C.D., Baribeau M. J., Jackman E. T., Caffrey Mc J., Rao Sudersena T., Webb B. J., Perovic D., Weatherly C. G., … Kluwer Academic Publishers	11 国際会議録 THE KINETICS OF Si1-xGexSi RELAXATION USING LARGE AREA DISLOCATION IMAGING TECHNIQUES Houghton, D.C., Timbrell, P.Y., Baribeau, J.-M. Materials Research Society
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